Transit-time Effects in Unipolar Solid-State Devices D. Dascalu epub | bukmekerskajakontora.ru

TRANSIT-TIME EFFECTS IN UNIPOLAR SOLID-STATE DEVICES.

Author: Dascalu, Dan. Very good condition in a very good dustwrapper. 395 pages. Wrapper spine faded. Published by: Abacus Press. Transit Time Effects Uniploar [D. Dascalu] on. FREE shipping on qualifying offers.

Transit-time Effects in Unipolar Solid-State Devices by Dascalu Dr. D. COVID-19 Update. June 15, 2020: Biblio is open and shipping orders. Read more here. Sign In; Register;. Transit-time Effects in Unipolar Solid-State Devices by Dascalu Dr. D. Used; very good; Hardcover; First; Condition Very Good/Very Good ISBN 10 085626007X ISBN 13. Transit-time Effects in Unipolar Solid-State Devices by D. Dascalu ISBN 13: 9780856260070 ISBN 10: 085626007x Hardcover; Uk: Taylor & Francis, January 1, 1974; ISBN-13: 978-0856260070. TRANSIT-TIME EFFECTS IN UNIPOLAR SOLID-STATE DEVICES. by Dan Dascalu. Published by Abacus Press. 1st. 1974. Very good condition in a very good dustwrapper. 395 pages. Wrapper spine faded. ISBN: 085626007x Stock no. 1707715 Price £18.00 Located at: Stella Books, Tintern.

Additional Physical Format: Online version: Dascălu, Dan. Transit-time effects in unipolar solid-state devices. Bucureşti, Editura Academiei Republicii Socialiste România; Tunbridge Wells. Cartea căutată se află aici!Cumpara acum online cartea al carei autor este Dan Dascalu, avand titlul Transit time effects in unipolar solid state devices, carte ce a fost publicata la Editura Academiei in anul 1974. Intra pe pagina anticariatului Pri. Dan Dascalu graduated the Faculty of Electronics of the University POLITEHNICA of Bucharest 1965 and obtained the Ph. D. from the same University in 1971, with a Thesis in semiconductor devices, comprising the experimental part done at the University of the Birmingham,UK 1968-1969. The effect of space charge upon unipolar drift currents in uniformly doped semiconductor regions is studied. The geometry is assumed one dimensional and diffusion is neglected. Both majority‐ and m. , continuand opera fondatorului scolii acad. Mihai Draganescu, prin trei monografii aparute in editura Academiei Romane. Acestea sunt: „Injectia unipolara in dispozitive electronice semiconductoare” 1972; “Transit-time effects in unipolar solid-state devices” 1974; “Electronic processes in unipolar solid-state devices” 1977.

The effect of space charge upon unipolar drift currents in uniformly doped semiconductor regions is studied. The geometry is assumed one dimensional and diffusion is neglected. Both majority‐ and minority‐carrier injection is considered. First, the carrier mobility is taken to be constant. The current and voltage are expressed as functions of the injection level and the normalized carrier. Dan Dascalu graduated the Faculty of Electronics of the University POLITEHNICA of Bucharest 1965 and obtained the Ph. D. from the same University in 1971, with a Thesis in semiconductor devices, comprising the experimental part done at the University of the Birmingham,UK 1968-1969. He is the author a number of books in semiconductors, including two monographs in English jointly published in. Small-signal frequency characteristics indicating the effect of hole transit times were measured for ‘punch-through’ p–v–p silicon diodes. The transit time was sufficiently long to allow measurements in a relatively low frequency range 0.5–18MHz, thus avoiding parasitic effects. Experimental results for several operating points in the square-law region of the d.c. characteristic.

Transit-time effects in unipolar solid-state devices Book.

He is the author of “Transit-time Effects in Unipolar Solid-State Devices” and “Electronic Processes in Unipolar Solid State Devices” both published by Abacus Press, Kent, U.K., 1974 and 1977, respectively as of other books and many technical papers published in scientific periodicals or conference proceedings. His early research. Unipolar / FET Transistor Basics. Field-Effect Transistor FET – Also known as Unipolar Transistor, is a three-ended three electrodes, voltage-controlled semiconductor electronic component that has the ability to amplify the electrical signal. FET family consists of a group of several types of different components, whose common feature is the indirect effect of the electric field on the. MINAFAB. Dan Dascalu is a full member academician of the Romanian Academy of Sciences and Professor at the University “Politehnica” of Bucharest. He is the author of "Transit-time Effects in Unipolar Solid-State Devices" and "Electronic Processes in Unipolar Solid State Devices" both. D. Dascalu, Transit-Time Effects in Unipolar Solidstate Devices Editedby Academiei RSRBucaresti, Romania and Abacus Press, Kent, England 1974. 28. V..

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